2N6796: 0.8W N-Channel Enhancement MOSFET

Product Description

This N-Channel mosfet diode is packaged in TO-205 low profile package, which has a power dissipation of 0.8mW.

Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add "PBF" suffix for Pb-free lead finish.

METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORs (MOSFETs) are used in control and sensing applications.