3N211: 360mW Dual gate mosfet

3N211
Product Description

This Dual gate mosfet diode is packaged in TO-72 package, which has a power dissipation of 360mW.

Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add "PBF" suffix for Pb-free lead finish.

Applications
Dual Gate Mosfets are used in VHF and UHF amplifier circuits.
Part Number Descriptive Datasheet HR Flow Max Power Dissipation Package Status Distributor On-hand Pricing
PD
mW
3N211 saved Dual gate mosfet 360 TO-72 Active Digitron 167
Part Number Descriptive Datasheet HR Flow Max Drain Source Voltage Max Power Dissipation Max Drain Current Min Zero Gate Voltage Drain Current Max Zero Gate Voltage Drain Current Max Gate Leakage Current Min Common Source Power Gain Max Common Source Power Gain Max Noise Figure Test Frequency Package Available Lead Finish Notes
VDS PD ID IDSS IDSS IGSS GPS GPS NF f
VOLTS mW mA mA mA nA dB dB dB MHz
3N211 saved Dual gate mosfet 27 360 50 6 40 10 24 35 3.5 200 TO-72 Sn/Pb
Package